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应用分子动力学方法研究了Cu和Al单晶在Ⅱ型加载条件下，加载速率对位错发射、层错宽度W及位错速度Vd的影响．结果表明，加载速率对W和Vd有显著影响．随着加载速率的增大，层错宽度减小，位错速度增大．当加载速率达到某一临界值时，能量不仅以发射位错的形式释放，而且形成孪晶，以降低体系的能量．
The effect of loading rate on dislocation emission, stacking fault width W and dislocation velocity Vd of Cu and Al single crystal under type Ⅱ loading was studied by molecular dynamics method. The results show that the loading rate has a significant effect on W and Vd. With the increase of loading rate, the stacking fault width decreases and the dislocation speed increases. When the loading rate reaches a certain critical value, the energy is released not only in the form of emission dislocations but also as twinning to lower the energy of the system.