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We present a high power diode-pumped continuous-wave Tm:YLF(Tm~(3+)-doped lithium yttrium fluoride) laser with a piece of silicon wafer as the output coupler(Si-OC laser) directly.Under the pump power of 40 W at 793 nm,a maximum output power of 12.1 W is obtained with a beam quality of M~2 ≤ 1.55 at 1887 nm,corresponding to an optical-to-optical efficiency of 30.25%and a slope efficiency of 33.21%.To the best of our knowledge,this is the first report on directly utilizing silicon as an output coupler(Si-OC) in the solid Tm:YLF laser system.Due to the intriguing characteristics of silicon,such as negligible absorption in the wavelength region around 2 μm,high damage threshold,low cost and long-pass filter properties,double-side polished monocrystalline silicon wafer is considered as an outstanding candidate output coupler in the high-power laser system 2 μm spectral region,which may dramatically reduce the total manufacturing costs of the 2 μm laser system.
We present a high power diode-pumped continuous-wave Tm: YLF (Tm ~ (3 +) - doped lithium yttrium fluoride) laser with a piece of silicon wafer as the output coupler (Si-OC laser) of 40 W at 793 nm, a maximum output power of 12.1 W is obtained with a beam quality of M ~ 2 ≤ 1.55 at 1887 nm, corresponding to an optical-to-optical efficiency of 30.25% and a slope efficiency of 33.21%. To the best of our knowledge, this is the first report on directly utilizing silicon as an output coupler (Si-OC) in the solid Tm: YLF laser system. Due to the intriguing characteristics of silicon, such as negligible absorption in the wavelength region around 2 μm, high damage threshold, low cost and long-pass filter properties, double-side polished monocrystalline silicon wafer is considered as an outstanding candidate output coupler in the high-power laser system 2 μm spectral region, which may dramatically reduce the total manufacturing costs of the 2 μm laser system.