【摘 要】
：
Electron-phonon coupling affects the properties of two-dimensional (2D) materials significantly,leading to a series of novel phenomena.Inelastic light scatterin
【机 构】
：
State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academ
论文部分内容阅读
Electron-phonon coupling affects the properties of two-dimensional (2D) materials significantly,leading to a series of novel phenomena.Inelastic light scattering provides a powerful experimental tool to explore electron--phonon interaction in 2D materials.This review gives an overview of the basic theory and experimental advances of electron-phonon coupling in 2D materials detected by Raman and Brillouin scattering,respectively.In the Raman scattering part,we review Raman spectroscopy studies of electron-phonon coupling in graphene,transition metal disulfide compounds,van der Waals heterostructures,strongly correlated systems,and 2D magnetic materials.In the Brillouin scattering part,we extensively introduce Brillouin spectroscopy in non-van der Waals 2D structures,including temperature sensors for phonons and magnons,interfacial Dzyaloshinsky-Moriya interaction and spin torque in multilayer magnetic structures,as well as exciton-polariton in semiconductor quantum well.
其他文献
Two-dimensional (2D) tungsten disulfide (WS2) has emerged as a promising ultrathin semiconductor for building high-performance nanoelectronic devices.The contro
Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-alectronics.In this report
All-norganic cesium lead halide based perovskite nanocrystals (PNCs) exhibit promising optoelectronic properties,but their poor stability and anion exchange rea
为了提高复杂光照条件下的人脸检测识别率,提出了一种基于Retinex图像增强技术应用于多任务卷积神经网络(multi-task cascaded convolutional networks, MTCNN)的人脸测算法。算法用Retinex理论对图像进行增强,能明显提高MTCNN在不同光照场景下的人脸检测精度,同时使面部五个关键点的定位更准确。实验证明,在复杂光照场景下,该方法比原始MTCNN网络
基于Na2Mg5Si12O30结构体系制备了一种新型的发光材料,即Eu2+掺杂的Na2Mg5(1-x)Eu5xSi12O30,其中Eu2+的掺杂浓度x=0.001～0.06.观察x值不同对于材料发光性能的影响,并在某一特
Doping of semiconductors,i.e.,accurately modulating the charge carrier type and concentration in a controllable manner,is a key technology foundation for modem
Constructing graphene-based heterostructures with large interfacial area is an efficient approach to enhance the electrochemical performance of supercapacitors
为了简化后期栅极驱动电路设计、降低成本,工业界对增强型高电子迁移率晶体管的需求与日俱增。采用p型栅结构制备增强型器件的方法是目前极有前景的一种增强型方法。该方法致力于提高器件的正向阈值电压和输出饱和电流,通过Silvaco TCAD软件调节AlGaN势垒层厚度及其Al组分,仿真器件转移特性曲线和输出特性曲线。将AlGaN势垒层厚度优化为20 nm,Al组分优化为0.27,使器件具有更大的阈值电压和输出饱和电流。并通过仿真器件能带结构和AlGaN/GaN沟道中电子浓度,进一步分析器件结构影响其性能的物理机制
As an emerging two-dimensional (2D) semiconductor material,monolayer MoS2 has recently attracted considerable attention.Various promising applications of this m
在简要介绍分时交替模数转换器采样技术及通道失配对其影响机理的基础上,阐述了近年来国内外分时交替模数转换器误差校准技术的最新研究进展,归纳了各个校准技术的实现方法及优缺点。大多数校准技术具有误差估计精度高、收敛速度快、自适应性强等优点,同时存在计算复杂、资源浪费、硬件实现困难等缺点;并进一步分析了当前校准技术存在的关键问题,如输入信号类型及带宽受限、未考虑非线性失配、对于高速高分辨率分时交替模数转换系统应用困难等。最后对未来的发展趋势进行了展望,为推进该领域的研究提供了参考。