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阻碍硅纳米晶LED器件在光电集成电路中的广泛应用的关键问题在于硅纳米晶电致发光强度较低。本文主要采用真空反应蒸发法和高温相分离方法来制备硅纳米晶样品,然后研究改变Si-nc浓度、改变衬底材料的电阻率、降低Si-nc与不同基体(SiO2、Si3N4)之间的界面势垒、场效应、电致表面等离子体等方法对硅纳米晶电致发光强度的影响。
A key problem that hinders the widespread use of silicon nanocrystalline LED devices in optoelectronic integrated circuits is the relatively low intensity of silicon nanocrystal electroluminescence. In this paper, the samples of silicon nanocrystals were prepared by vacuum reactive evaporation method and high temperature phase separation method. Then the Si-nc concentration was changed to change the resistivity of the substrate material, and the Si-nc and Si (III) Effect of Interface Barrier, Field Effect and Electrical Surface Plasmonic on the Luminescence of Silicon Nanocrystals.