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研究和制作了一种新型Au/n-ZnO/p-Si结构的肖特基发射极、异质结集电极紫外增强双极型光电三极管.分析了器件原理,测试了I-V特性、C-V特性以及器件的光谱响应,从200到400nm的紫外光响应灵敏度得到明显增强而对大于400nm的可见光的响应特性得到保留.实验显示Au/n-ZnO/p-Si结构的紫外增强型的光电三极管对紫外光的响应明显增强,对371nm波长的紫外光的灵敏度是普通n-ZnO/p-Si异质结紫外光电二极管道的5~10倍.
A new type of Schottky emitter with Au / n-ZnO / p-Si structure and heterojunction electrode UV-enhanced bipolar phototransistor were researched and fabricated.It analyzed the principle of the device, tested IV characteristics, CV characteristics and device Of the spectral response, from 200 to 400nm UV response sensitivity was significantly enhanced for more than 400nm of visible light response characteristics are retained.Experiments have shown that Au / n-ZnO / p-Si structure of the UV-enhanced phototransistor UV light Of the response was significantly enhanced, the sensitivity of 371nm wavelength of UV light is n-ZnO / p-Si heterojunction UV photodiode channel 5 to 10 times.