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文章对H桥(全桥)结构的D类开关功率放大器负载特性进行了理论分析与仿真验证。首先对以开关模式工作的晶体管的特性进行分析,明确了晶体管导通内阻与导通电流的变化关系。其次推导了晶体管导通内阻变化时,功放电路输出功率与漏极效率的表达式,利用ADS进行仿真验证,仿真结果和理论结果基本一致。最后分析推导了不同供电电压条件下,电路的负载特性,可以为设计满足指标要求的电路提供指导。
The paper analyzes and simulates the load characteristics of Class D switching power amplifier with H bridge (full bridge) structure. First of all, the characteristics of the transistor operating in the switch mode are analyzed, and the relationship between the on-resistance of the transistor and the on-current is clearly defined. Secondly, the expression of the output power and the drain efficiency of the power amplifier circuit is deduced when the internal resistance of the transistor is changed. The simulation results are validated by ADS. The simulation results are in good agreement with the theoretical ones. Finally, the load characteristics of the circuit under different supply voltage conditions are derived and analyzed, which can provide guidance for the design of circuits that meet the requirements of the specification.