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本文讨论微波砷化镓功率场效应管及其电路技术的最新进展。其内容涉及工作频段直至K波段的器件的最佳结构和最佳设计参数。叙述了混合型砷化镓场效应管功率放大器的宽带匹配网络。这种网络是采用计算机辅助设计方法得出的,利用了从S参数特性推导出,并经修正后用于大信号工作的场效应管等效电路模型。本文还介绍了单片型场效应管功率放大器的设计和性能方面的进展。
This article discusses the microwave GaAs power FET and the latest developments in circuit technology. Its content relates to the best structure and best design parameters of the device in the working frequency band up to the K band. Describes the broadband matching network of hybrid GaAs FET power amplifier. This network is derived using a computer-aided design approach that takes advantage of the FET equivalent circuit model derived from the S-parameter characteristics and corrected for large-signal operation. This article also describes the monolithic FET power amplifier design and performance improvements.