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一、引言在MOS集成电路领域里,为了提高集成度、电特性及稳定性,人们进行了大量的研究工作,使MOS器件获得了迅速的发展,新工艺、新技术和新结构层出不穷。特别是在存储器方面的发展更快,例如,加拿大贝尔北方研究公司的8192位移位寄存器,美国通用仪器公司的2048位动态随机存储器。还出现了18000位单块随机存储器,12000位单块只读存储器,16384位只读存储器。MOS动态存储器中,主要是1千位随机存储器。另外,性能更高的N沟4千位随机存储器已试制成功,正在投入批量生产。
I. INTRODUCTION In the field of MOS integrated circuits, a great deal of research work has been done to improve the integration, the electrical characteristics and the stability of the MOS devices. As a result, the MOS devices have been rapidly developed. New processes, new technologies and new structures are emerging. In particular, the development of memory faster, for example, the North American Institute of Bell 8192 shift register, the United States General Instrument Corporation 2048 bit dynamic random access memory. There have also been 18,000 monolithic random-access memories, 12,000 monolithic read-only memories, and 16,384 read-only memories. MOS dynamic memory, mainly 1 random-bit RAM. In addition, the higher performance N-channel 4-bit random access memory has been successfully trial-produced, is put into mass production.