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We report Al_(0.30)Ga_(0.70)N/GaN/Al_(0.07)Ga_(0.93)N double heterostructure high electron mobility transistors with a record saturation drain current of 1050 mA/mm.By optimizing the graded buffer layer and the GaN channel thickness,both the crystal quality and the device performance are improved significantly,including electron mobility promoted from 1535 to 1602cm~2 /V-s,sheet carrier density improved from 0.87×10~(13) to 1.15×10~(13) cm~(-2),edge dislocation density reduced from 2.5× 10~(10) to 1.3×10~9 cm~(-2),saturation drain current promoted from 757 to record 1050mA/mm,mesa leakage reduced by two orders in magnitude,and breakdown voltage promoted from 72 to 108 V.
We report that Al_ (0.30) Ga_ (0.70) N / GaN / Al_ (0.07) Ga_ (0.93) N double heterostructure high electron mobility transistors with a recorded saturation drain current of 1050 mA / mm.By optimizing the graded buffer layer and the GaN channel thickness, both of the crystal quality and the device performance are significantly improved, including electron mobility promoted from 1535 to 1602 cm 2 / Vs, sheet carrier density improved from 0.87 × 10 13 to 1.15 × 10 13 cm ~ (-2), the value of edge dislocation density reduced from 2.5 × 10 ~ (10) to 1.3 × 10 ~ 9 cm ~ (-2), the saturation drain current promoted from 757 to record 1050mA / mm, , and breakdown voltage promoted from 72 to 108 V.