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ZnSe 是直接带跃迁型宽禁带化合物半导体,具有较大的电光常数和光学非线性特性,但是在制备光双稳器件腐蚀窗口时,很难找到象 Ⅲ-Ⅴ 族材料那样有选择的腐蚀液。因此寻找合适的透明衬底是解决透射光调制器件的最直接有效的方法。
ZnSe is a direct-bandgap wide bandgap compound semiconductor with a large electro-optical constant and optical nonlinearity. However, it is difficult to find a selective etching solution such as a III-V material in the preparation of a photo-bistable device etching window . So to find a suitable transparent substrate is to solve the most direct and effective method of transmitting light modulation device.