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6H-SiC bulk crystals have been prepared by sublimation method in an inductively heated growth reactor. The effect of nitrogen doping on absorption for 6H-SiC was investigated. The absorption measurement based on optical method is a non-destructive and non-contact method. The band-gap narrowing with higher doping concentration was observed.For n-type doping below band-gap absorption band at 623 nm for 6H-SiC was observed. The peak intensity of the absorption band increased with increasing charge carrier concentration obtained from Hall measurements. It is also found that the nitrogen doping level decreased in the radial direction and it was the highest at the beginning of growth.