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射频通信领域中,开关触点材料对射频微电子机械系统(RF MEMS)开关的性能影响很大。在图形化的二氧化硅(Si O2)基底上采用热化学气相沉积(TCVD)法通过“分段”方法生长出了长度为1~20μm可控的垂直均匀的优质碳纳米管(CNT)微阵列,并结合MEMS工艺将CNT/Au复合触点转移到了玻璃基底上。转移前在面积分别为30~120μm2碳管阵列顶端镀金,测量出CNT/Au电极阻值分布在0.429~0.612Ω,与相同面积Au电极(0.421Ω)导电性能相差不大。因此,CNT/Au是一种潜在优良的MEMS开关触点材料。
In the field of radio frequency communication, the material of the switch contact has a great influence on the performance of the radio frequency micro-electro-mechanical system (RF MEMS) switch. On the patterned silicon dioxide (Si O2) substrate, the vertical uniform high quality carbon nanotubes (CNTs) with controlled length of 1 ~ 20μm were grown by the “segmented” method using the thermal chemical vapor deposition ) Microarrays and transfer the CNT / Au composite contacts to a glass substrate in conjunction with a MEMS process. Before the transfer, the top of CNTs arrayed in the area of 30 ~ 120μm2 was plated with gold. The resistance distribution of CNT / Au was measured at 0.429 ~ 0.612Ω. The conductivity of CNTs with the same area (0.421Ω) was similar. Therefore, CNT / Au is a potentially excellent MEMS switch contact material.