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近来人们广泛地研究在激光作用下注入半导体中所产生的结构变化。研究者主要力量集中研究注入层从非晶态向晶态的过渡,以及离子注入时产生的辐射破坏的激光退火。本质的问题是,激光辐射引起半导体的参数变化是多种不同退火机理作用的结
Recently, extensive studies have been made on the structural changes caused by the injection of a laser into a semiconductor. The main force of the researchers focused on the transition from amorphous to crystalline states of the implanted layer and the laser annealing of the radiation-induced ion implantation. The essential problem is that the parameter variations of the semiconductor caused by the laser radiation are the result of the action of many different annealing mechanisms