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随着全球信息化社会对高速数据通信的需求不断攀升,现有的无线接入技术基本都处于百兆量级,已经无法满足未来多媒体资源大数据量的实际应用需求。其中为满足室内短距离高速无线通信千兆级以上的需求,利用60 GHz频段进行通信已经成为一个重要的技术途径。利用成熟的0.15μm赝配高电子迁移率晶体管(PHEMT)工艺设计了一个工作在60 GHz频段的中功率宽带放大器,频率覆盖50~64 GHz,增益12 dB,线性输出功率14 dBm,饱和输出功率16.5 dBm,功率附加效率为12%。性能与65 nm CMOS工艺设计芯片相当,但前期系统验证和芯片开发阶段的投入成本远低于65 nm RF CMOS,适用于前期系统验证工作。
With the increasing demand for high-speed data communications in the global information society, the existing wireless access technologies are basically on the order of hundreds of trillion, and have been unable to meet the actual application requirements of large amounts of multimedia resources in the future. Among them, in order to meet the requirement of gigahertz above indoor short-range high-speed wireless communications, the use of the 60 GHz band for communication has become an important technical approach. A medium-power broadband amplifier operating in the 60 GHz band is designed using the mature 0.15μm pseudomorphic high electron mobility transistor (PHEMT) process. The frequency range covers 50-64 GHz with gain of 12 dB, linear output power of 14 dBm, saturation output power 16.5 dBm, power added efficiency of 12%. The performance is comparable to that of a 65 nm CMOS process design chip, but the initial cost of system verification and chip development is much lower than that of the 65 nm RF CMOS for pre-system verification.