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用等离子体化学气相淀积系统制备了一种新颖的SiCOF/a-C∶F双层低介电常数介质薄膜,并用红外光谱表征了该薄膜的化学结构.通过测量介质的折射率发现该薄膜长时间暴露在空气中,其光频介电常数几乎不变.然而,随退火温度的增加,其光频介电常数则会减小.基于实验结果讨论了几种可能的机理.二次离子质谱分析表明在Al/a-C∶F/Si结构中F和C很容易扩散到Al中,但在Al/SiCOF/a-C∶F/Si结构中,则没有发现C的扩散,说明SiCOF充当了C扩散的阻挡层.分析还发现在SiCOF和a-C∶F之间没有明显的界面层.
A novel thin film of SiCOF / aC:F dual-layer low dielectric constant dielectric was prepared by plasma chemical vapor deposition system, and the chemical structure of the film was characterized by infrared spectroscopy. The refractive index of the medium was measured and the film was found for a long time However, as the annealing temperature increases, the dielectric constant of the optical frequency decreases, and several possible mechanisms are discussed based on the experimental results.Secondary ion mass spectrometry It is found that F and C diffuse into Al easily in the Al / aC: F / Si structure. However, in the Al / SiCOF / aC: F / Si structure, no diffusion of C is found, indicating that SiCOF acts as a barrier to C diffusion The analysis also found no obvious interfacial layer between SiCOF and aC: F.