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循环时间短的１Ｍ—ｂｉｔ ＳＲＡＭ日本东芝公司应用０．７μｍＢｉＣＭＯＳ技术和优化电路设计研制出三种１Ｍ－ｄｉｔ同步ＳＲＡＭ，循环时间很短，１０—１２ｎｓ。这三种同步高速ＳＲＡＭ能与输入时钟（如ＭＰＩ）同步读写数据。它们与１００ＭＨｚ高速ＭＰＵ兼容。...
1M-bit SRAM with Short Cycle Time Toshiba Corporation of Japan developed three kinds of 1M-dit synchronous SRAMs with 0.7μm BiCMOS technology and optimized circuit design. The cycle time is very short, 10-12ns. These three synchronous high-speed SRAM can read and write data synchronously with the input clock (such as MPI). They are compatible with 100MHz high speed MPUs. ...