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HgCdTe红外探测器的噪声很低,为了不降低探测器的性能,配用前置放大器的噪声应低于2nV/(1/Hz)~2。作者曾经详细分析了这个问题并指出:分立型低频低噪声晶体管3DX6适于大部分中、长波HgCdTe探测器的要求。随着对放大器小型化的需要,以及多元探测器对放大器的低噪声的需要增加,迫切要求有适合于HgCdTe探测器使用的集成化低噪声
HgCdTe infrared detector noise is very low, in order not to reduce the performance of the detector, with pre-amplifier noise should be less than 2nV / (1 / Hz) ~ 2. The author has analyzed this problem in detail and pointed out that the discrete low-frequency low-noise transistor 3DX6 is suitable for the requirements of most medium- and long-wave HgCdTe detectors. With the need for amplifier miniaturization and the increased need for multiple detectors for low noise amplifiers, there is an urgent need for an integrated, low noise, suitable for use with HgCdTe detectors