Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photode

• 作 者: Noureddine Sfina Naima Yahyaou
• 机 构: DepartmentofPhysics,InterdisciplinaryNanoscienceCentreofMarseille（CINaM）
• 出 处: 材料科学建模与数值模拟(英文)
• 发表日期: 2014年1期
• 关键词: STRAINED SIGE/SI Quantum Wells Band Structure Device Engineering P-I-N Infrared

In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consists in a W-like potential profile stra