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使用ArF准分子激光脉冲对UHV/CVD条件下生长的Ge量子点进行退火处理,获得了底宽为20~25nm的光致量子点(LIQD),远小于退火前的量子点大小.LIQD的密度约为6×1010cm-2.分析表明,在ArF准分子激光脉冲作用下,退火样品只有表面扩散,并没有体扩散.激光脉冲对表面Ge原子的扩散控制导致了Ge量子点形貌发生了巨大的改变.该方法为获得高密度小尺寸的Ge量子点提供了新的途径.采用原子力显微镜对光致量子点的表面形貌进行了研究.
Using ArF excimer laser pulses to anneal Ge quantum dots grown under UHV / CVD conditions, a photoluminescent quantum dot (LIQD) with a bottom width of 20-25 nm is obtained, which is much smaller than the quantum dot size before annealing. The density of LiQD About 6 × 1010cm-2.The analysis shows that under the ArF excimer laser pulse only the surface diffusion and no bulk diffusion are observed.The diffusion control of the Ge atoms on the surface of the laser pulse leads to a huge Ge quantum dot morphology This method provides a new way to obtain high-density and small-size Ge quantum dots.The surface morphology of photo-induced quantum dots is studied by atomic force microscopy.