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日本电报电话公司推出光通信用半导体激光器制作工序减半的新工艺。通过确立只对发光层进行掩埋的选择生长技术,使迄今至少需要两道工序以上的晶体生长变成一道工序。除使制作成本大幅度降低外,还可减少工序数,可望降低废品率。其关键是,掩埋时使用新的晶体生长技术,将基片上形成的层迭膜削成凸状,形成发光层,削去的部分再用别的材料掩埋。在掩埋凸状发光层时,用了Se含量比过去多10倍的InP,发现只有凸状的两侧受到掩埋,将这一现象用于实际激光器制作,成功地使晶体生长次数减到一半以下。新工艺即使不用掩模,也可通过把混入InP的Se之类掺杂量调到最佳含量,便能一次生长出完全掩埋发光层。
Nippon Telegraph and Telephone Corporation Introduces New Process for Halving Manufacturing Process of Semiconductor Laser for Optical Communication. By establishing a selective growth technique that buries only the light-emitting layer, at least two crystal growth steps up to now are required to be a single step. In addition to a substantial reduction in production costs, but also reduce the number of processes, is expected to reduce the rejection rate. The key is to use the new crystal growth technology buried in the substrate, the laminated film formed on the substrate cut into a convex, the formation of light-emitting layer, the cut-off part and then buried with other materials. In embedding the convex light-emitting layer, InP, which is 10 times more Se-containing, was found and only convex-shaped sides were buried, and this phenomenon was used for actual laser fabrication, successfully reducing the number of crystal growth to less than half . The new process allows for the full growth of the buried light-emitting layer at a time by adjusting the amount of doping such as In into the Se, without using a mask.