论文部分内容阅读
利用光电流谱 ,结合 X射线双晶衍射研究了快速退火对 Si1 - x Gex/ Si多量子阱 p- i- n光电二极管的影响 .由于应变 Si Ge的部分弛豫和 Si- Ge互扩散 ,退火后的二极管的截止波长有显著的减小 .但是 ,在 75 0— 85 0℃范围内 ,波长蓝移量随着退火温度的增加而变化缓慢 ,而样品的光电流强度却随温度是先减弱而后又增强 ,这可能主要是由于在不同温度退火过程中失配位错的产生和点缺陷的减小造成的 .
The effects of rapid annealing on Si-xGex / Si MQW p-i-n photodiodes were studied by means of photocurrent spectra and X-ray double crystal diffraction.Due to the partial relaxation of strained SiGe and Si-Ge interdiffusion, After the anneal, the cut-off wavelength of the diode decreases significantly, however, the blue shift of the wavelength changes slowly with the increase of the annealing temperature in the range of 75 0-85 0 ℃, while the photocurrent intensity of the sample changes with the temperature Weakened and then strengthened, which may be mainly due to the misfit dislocations and the decrease of point defects during annealing at different temperatures.