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本文叙述了真空悬浮区熔硅中磷的变化规律,并对多次区熔后硅中的磷浓度作了测定,得到了残留磷随区熔次数增加而成指数衰减的蒸发曲线。实验发现,在一定的真空度下,这种衰减不是无限止的,到了一定次数后,残留的磷含量有一衰减极限值。本文引入了返回系数的概念,从而导出真空悬浮区熔时磷的变化规律的理论关系式,使实验蒸发曲线得到比较满意的解释。借助硅中磷的衰减极限这一概念及蒸发曲线和电阻率的变化,可以作为一个简化探测硅中的磷、硼浓度的分析工具。
In this paper, the variation of phosphorus in molten silicon in vacuum suspension zone is described. The phosphorus concentration in silicon after multiple zone melting is measured. The evaporation curve of residual phosphorus with exponential decay as the zone melting frequency increases is obtained. The experiment found that under a certain degree of vacuum, this attenuation is not unlimited, and after a certain number of times, the residual phosphorus content has an attenuation limit. In this paper, the concept of return coefficient is introduced to derive the theoretical relationship between the variation law of phosphorus in vacuum levitation zone and the experimental evaporation curve to obtain a satisfactory explanation. With the concept of phosphorus attenuation limit in silicon and changes in evaporation curve and resistivity, this can be used as an analytical tool to simplify the determination of phosphorus and boron in silicon.