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Polycrystalline SnO2 thin films were deposited on sapphire substrates at 450°C under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electri- cal properties of SnO2 thin films was studied. X-ray diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak cen- tered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa, which is related to the improvement of crystalline of the films.
Polycrystalline SnO2 thin films were deposited on sapphire substrates at 450 ° C under different ambient oxygen pressures by pulsed laser deposition technique. The effect of ambient oxygen pressure on the structural, optical and electri- cal properties of SnO2 thin films was studied. X-ray diffraction and Hall measurements show that increasing the ambient oxygen pressure can improve crystallization of the films and decrease resistivity of the films. A violet emission peak cen- tered at 409 nm was observed from photoluminescence measurements for SnO2 films under deposition ambient oxygen pressure above 5 Pa , which is related to the improvement of crystalline of the films.