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前沿光刻技术与新型光致抗蚀材料的结合使Lucent研究所贝尔实验室的研究人员们制备出一种特征尺寸只有80nm的功能电子器件.这种器件(内设置一个80×160nm浮置栅的闪存单元)由硅制成.将光刻技术应用于制备更小尺寸的器件,这是全世界科研人员努力的目标,因为这避免了最终使用另一种蚀刻技术而带来的昂贵代价.使用193nm波长的光,一个0.6数值孔径的投影透镜和相移掩模制备了这种存储元件.对于尺寸为80nm的器件,使用透镜的光瞳照明填充系数是0.3,而尺寸大于80nm的器件,填充系数是0.7.贝尔实验室研制了两种新型材料,一种基于环烯和顺丁烯二酐的新型抗蚀剂,另一种是抗蚀剂与硅片之间的光吸
The combination of leading-edge lithography and new photoresist materials enabled researchers at Bell Laboratories at the Lucent Institute to create a functional electronic device with a feature size of only 80nm, which is equipped with an 80 × 160nm floating gate Of the flash memory cells) are made of silicon.It is a goal of researchers worldwide to apply photolithography to the fabrication of smaller devices because it avoids the costly cost of eventually using another etching technique. This storage element was fabricated using 193 nm wavelength light, a 0.6 numerical aperture projection lens and a phase shift mask.For a device with 80 nm size, the pupil illumination of the lens was used with a fill factor of 0.3 and a device with dimensions greater than 80 nm, The fill factor is 0.7. Bell Laboratories has developed two new materials, a new type of resist based on cycloolefin and maleic anhydride, and the other a light absorption between resist and wafer