Growth and fundamentals of bulk β-Ga2O3 single crystals

• 作 者: H.F.Mohamed Changtai Xia Qingl
• 机 构: KeyLaboratoryofMaterialsforHighPowerLaser,physicsDepartment
• 出 处: 半导体学报:英文版
• 发表日期: 2019年1期
• 关键词: β-Ga2O3 CRYSTAL structure BULK CRYSTAL GROWTH APPLICATIONS
• 基金项目: The following grants:Chinese Academy of Sdences president's International Fellowship Initiative (Grant No.2018PE0033),National Natural Science Foundation of China (Grant No.51802327),Science and T

The rapid development of bulk β-Ga2O3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(~ 4.9 eV) and large breakdown electric field of about8 MV/cm. Low cost an