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采用高温溶液法在不同温度下生长了掺质量分别为摩尔原子质量的０．０３％和０．１％的Ｃｒ：ＫＴＰ晶体，确定了它们的最佳生长温度区间，并讨论了不同生长温度区间对Ｃｒ：ＫＴＰ晶体形态的影响。利用光学显微镜和扫描电镜观察了Ｃｒ：ＫＴＰ的３种生长缺陷。利用差热分析法分析了Ｃｒ２Ｏ３对ＫＴＰ晶体分解温度的影响。测定了Ｃｒ：ＫＴＰ品体的吸收光谱和蓝绿波段的荧光光谱，并用间接法估计了晶体中Ｃｒ４＋离子的含量。确定了摩尔原子质量的０．０３％为Ｃｒ：ＫＴＰ晶体的最佳掺质浓度，并用激光激发实验予以证明。
High temperature solution method was used to grow Cr (superscript 3 +): KTP crystals with different mass ratios of 0.03% and 0.1%, respectively, at different temperatures. The optimal growth temperature intervals were determined and the different growth temperature intervals Effect on Cr: KTP Crystal Morphology. The growth defects of Cr: KTP were observed by light microscopy and scanning electron microscopy. The effect of Cr2O3 on KTP crystal decomposition temperature was analyzed by DTA method. The absorption spectra of Cr: KTP and the fluorescence spectra of blue and green bands were measured. The content of Cr4 + ions in the crystals was estimated by indirect method. It was confirmed that 0.03% of the molar mass of the atom is the best doping concentration of Cr: KTP crystal, and it is proved by laser excitation experiment.