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讨论了激光二极管对欧姆接触的要求和肖特基势垒隧道接触的特性,介绍了激光二极管接触电阻的测量过程。在测量时,不需要专门制作样品,也无需制作特殊接触图案。测量并计算了三种不同表面杂质浓度上Ti/PtAu的接触电阻。发现,p型载流子浓度低于1×10~(19)cm~(-2),接触电阻太高以至不能得到好的器件性能;对高的p型掺杂浓度,比接触电阻可以很低(2×10~(-6)Ω·cm~2)。显然,这些接触满足低电阻和长期使用的要求,同时也不会导致明显的材料退化。
The requirements of the laser diode for ohmic contact and the Schottky barrier tunneling are discussed. The measuring process of laser diode contact resistance is introduced. There is no need to make samples specifically for measurements or to make special contact patterns. The contact resistance of Ti / PtAu at three different surface impurity concentrations was measured and calculated. It is found that the p-type carrier concentration is lower than 1 × 10 ~ (19) cm -2 and the contact resistance is too high to obtain good device performance. For high p-type doping concentration, the contact resistance can be very high Low (2 × 10 -6 Ω · cm 2). Obviously, these contacts meet the requirements of low resistance and long-term use without causing significant material degradation.