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本文报导了一种利用活化反应蒸发(ARE)法淀积介质膜层的简单方法。这种方法把加热钨丝作为一种电子发射体使用,而不像较早报导的方法需要稳定等离子体的磁场。在涂敷过程中的反应气压为5×10-4托。最后还介绍了利用这种装置以每秒约为50A的速率淀积的Bi2O3膜层的X射线衍射圈和
This paper reports a simple method of depositing a dielectric film by activation-reactive evaporation (ARE). This method uses heated tungsten wire as an electron emitter, unlike the earlier reported method that requires a stable plasma magnetic field. The reaction pressure during the coating was 5 x 10-4 Torr. Finally, the X-ray diffraction profile of the Bi2O3 film deposited by this apparatus at a rate of about 50 A per second and