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研制了一种氧化锌基的固体装配型薄膜体声波谐振器。采用了布拉格反射层为反射基底,以掺镁氧化锌作为压电层,利用MEMS微制造工艺形成了一系列的固体装配型薄膜体声波谐振器。通过优化条件,制备出了具有优良谐振性能的薄膜体声波器件。该谐振器回波损耗可达-20 dB,谐振峰在1.8~2.4 GHz,Q值可达800。利用X射线衍射(XRD)谱研究了MgxZn1-xO压电薄膜的结晶特性,得到了很好的c轴(002)铅锌矿薄膜结构特性。利用3D显微镜观测了固体装配型薄膜体声波谐振器的表面与侧面结构。根据MgxZn1-xO压电层的测量厚度和谐振频率,计算了掺镁氧化锌薄膜体声波谐振器的相位声速值为6 854.1 m/s,比纯氧化锌压电薄膜的声速6 330 m/s略高。
A zinc oxide based solid-fitted thin-film bulk acoustic resonator was developed. Bragg reflective layer is adopted as the reflective substrate, doped with magnesium oxide as the piezoelectric layer, and a series of solid-fitted thin-film bulk acoustic resonators are formed by MEMS micro-fabrication process. By optimizing the conditions, a thin film bulk acoustic wave device with excellent resonance performance was prepared. The resonator has a return loss of -20 dB, a resonant peak of 1.8 to 2.4 GHz and a Q of 800. The crystalline properties of MgxZn1-xO piezoelectric thin films were studied by X-ray diffraction (XRD), and the structural characteristics of the c-axis (002) lead-zinc thin films were obtained. The surface and side structures of solid-fitted thin-film bulk acoustic resonators were observed with a 3D microscope. Based on the measured thickness and resonant frequency of the MgxZn1-xO piezoelectric layer, the phase velocity value of the bulk acoustic resonator doped with zinc oxide was calculated to be 6 854.1 m / s, which is 6 330 m / s higher than the pure zinc oxide piezoelectric film Slightly higher