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探讨了ZnTiO3薄膜掺杂Cu元素对于薄膜性质、相变化与微结构之影响.实验是在一定温度下以射频磁控溅镀系统将铜沉积于ZnTiO3陶瓷靶上,控制沉积于ZnTiO3陶瓷靶上铜含量之后,再沉积掺杂铜的钛酸锌薄膜于SiO2/Si基板上.成长出来的薄膜经由ESCA分析得知铜的质量分数分别为0.84%、2.33%和2.84%.从XRD分析常温下掺杂Cu的ZnTiO3薄膜为非晶质态,经过600℃退火后,ZnTiO3薄膜则由非晶质态转变成Zn2Ti3O8结晶相,而未掺杂铜的ZnTiO3薄膜在600℃退火时并没有结晶相产生.ZnTiO3薄膜经过900℃退火后,Zn2Ti3O8相分解成Zn2TiO4相和TiO2相,且ZnTiO3晶格常数因为Cu离子置换至Zn离子的位置有变小的趋势.由TEM分析证实Cu离子与Zn离子的置换,导致晶格应变产生双晶缺陷.经由XRD、SEM和TEM分析得知掺杂太多的铜会抑制TiO2相的生成,而随着过多的Cu析出,晶体平均晶粒慢慢变小晶格应变也随之降低,以致晶格常数回复往原来晶格常数方向趋近.
ZnTiO3 thin films doped with Cu elements on the properties of thin films, phase transition and microstructure of the impact of the experiment is a certain temperature in the RF magnetron sputtering system deposition of copper on the ZnTiO3 ceramic target, control deposited on the ZnTiO3 ceramic target copper After the content of copper doped zinc titanate thin film on the SiO2 / Si substrate growth of the film by ESCA analysis of the copper mass fraction were 0.84%, 2.33% and 2.84% from XRD analysis of mixed at room temperature The ZnTiO3 films doped with Cu were amorphous, and the ZnTiO3 films were transformed from amorphous to Zn2Ti3O8 after annealing at 600 ℃. However, no ZnTiO3 films were annealed at 600 ℃. After annealed at 900 ℃, the Zn2Ti3O8 phase decomposed into Zn2TiO4 phase and TiO2 phase, and the lattice constant of ZnTiO3 tended to decrease because of the substitution of Cu ions to Zn ions.The TEM analysis confirmed the substitution of Cu ions and Zn ions, Resulting in lattice strain twinning defects.By XRD, SEM and TEM analysis showed that too much doped copper will inhibit the formation of TiO2 phase, and with the excessive precipitation of Cu, the average crystal grains slowly become smaller lattice Strain will also be reduced, resulting in lattice often Number of responses to the original lattice constant approach.