高频等离子体化学气相沉积法制氮化硅超细粉的工艺研究

• 作 者: 洪若瑜 李洪钟 李春忠 胡黎明
• 机 构: 中国科学院化工冶金研究所多相反应开放研究实验室!北京100080,中国科学院化工冶金研究所多相反应开放研究实验室!北京100080,华东理工大学技术化学物理所!上海200237,华东理工大学技术化学物
• 出 处: 化工冶金
• 发表日期: 1996年03期
• 关键词: 超细粉末 氮化硅 工艺研究 化学气相沉积 进料口 高频等离子体 晶型转变 无定形 高温结构陶瓷 尾焰

以Ar气为载气，SiCl4和NH3为原料，在高频等离子体化学气相沉积反应器中，制备了超细无定形的Si3N4粉未．该粉具有粒度小、粒径窄和分散均匀的特点，氮含量在36％以上．实验中发现，当SiCl4进料口在前，NH3进料口在后，且两个进料口均在高频等离子体尾焰处，经脱NH4Cl的产物中氮含量较高．而反应物NH3也不宜太过量，以NH3：SiCl4=8：1为好．Si3N4的晶型转变在1400“C下处理8h，效果较好

Using Ar gas as carrier gas, SiCl4 and NH3 as raw materials, ultrafine amorphous Si3N4 powder was prepared in a high frequency plasma chemical vapor deposition reactor. The powder has a small particle size, narrow particle size and uniform dispersion, nitrogen content of 36% or more. It was found in the experiment that when the inlet of SiCl4 was in front and the inlet of NH3 was in the rear, both of the inlet were at the tail of the high-frequency plasma, and the content of nitrogen in the product after de-NH4Cl was higher. The reactant NH3 should not be too much to NH3: SiCl4 = 8: 1 as well. Si3N4 crystal transition at 1400 "C for 8h, the effect is better