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提出了一种低功率损耗的新结构 IGBT.该新结构的创新点在于其复合耐压层结构 ,该耐压层包括深扩散形成的 n型缓冲层和硼注入形成的透明背发射区两部分 .虽然在正常工作条件下 ,该新结构 IGBT工作于穿通状态 ,但器件仍具有非穿通 IGBT( NPT- IGBT)的优良特性 .该新结构 IGBT具有比 NPT- IGBT更薄的芯片厚度 ,从而可以获得更好的通态压降和关断功耗之间的折衷 .实验结果表明 :与 NPT- IGBT相比较 ,新结构 IGBT的功率损耗降低了 40
A new structure IGBT with low power loss is proposed.The innovation of this new structure lies in the structure of its composite pressure-resistant layer, which consists of an n-type buffer layer formed by deep diffusion and a transparent back-emitting region formed by boron implantation Although the new structure IGBT operates in a through state under normal operating conditions, the device still has the excellent characteristics of a non-through IGBT (NPT-IGBT) that has a thinner chip thickness than the NPT-IGBT so that it can Get a better trade-off between on-state voltage drop and turn-off power consumption.The experimental results show that compared with NPT-IGBT, the power loss of the new structure IGBT is reduced by 40