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一、概述目前,在直流高压电源中,已广泛地使用具有许多优点的高反压硅二极管。但是,硅二极管本身固有的弱点是耐受过电压和过电流能力差,即使超过硅管的反向击穿电压不高,时间只有几微秒,都有可能导致管子的损坏。尤其是在高压设备中,由于其内部电磁能量的积聚与转换,不免要在电源中产生过电压。如常见的开关操作过电压,保护电器动作过电压,以及硅管本身固有的物理现象所引起的过电压等。所有这些过电压,都直接危害着电源设备的安全工作。为了更好地发挥硅二极管的优点,克服缺点,保障设备的安全运行,就必须采取保护措施。在此,仅就电源中常见的几种过电压的产生和有关抑制方法论述如下。
I. Overview At present, high-voltage silicon diodes with many advantages have been widely used in DC high-voltage power supplies. However, the inherent weakness of silicon diodes is the ability to withstand overvoltage and overcurrent, which can cause damage to the tube, even at times less than the reverse breakdown voltage of the silicon tube. Especially in high-voltage equipment, due to its internal electromagnetic energy accumulation and conversion, it is inevitable to produce over-voltage in the power supply. Such as the common over-voltage switch operation, protection of electrical over-voltage protection, as well as silicon tube inherent physical phenomena caused by over-voltage. All of these over-voltage, are directly endangering the safety of power equipment. In order to give full play to the advantages of silicon diodes to overcome shortcomings and ensure the safe operation of equipment, we must take protective measures. Here, only the power supply common in several over-voltage generation and suppression methods are discussed below.