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3C-SiC films have been deposited on Si (111) substrates by the low-pressure vertical chemical vapor deposition (LPVCVD) with gas mixtures of SiH4, C3Hg and H2- The growth mechanism of SiC films can be obtained through the observations using field emission scanning electron microscope (FESEM). It is found that the growth process varies from surface control to diffusion control when the deposition temperature increases from 1270 to 1350℃. The X-ray diffraction (XRD) patterns show that the SiC films have good crystallinity and strong preferred orientation. The results of the high resolution transmission electron microscopy (HRTEM) image and the transmission electron diffraction (TED) pattern indicate a peculiar superlattice structure of the film. The values of the binding energy in the high resolution X-ray photoelectron spectra (XPS) further confirm the formation of SiC.
3C-SiC films have been deposited on Si (111) substrates by the low-pressure vertical chemical vapor deposition (LPVCVD) with gas mixtures of SiH4, C3Hg and H2- The growth mechanism of SiC films can be obtained through the observations using field emission scanning electron microscope (FESEM). It is found that the growth process varies from surface control to diffusion control when the deposition temperature increases from 1270 to 1350 ° C. The X-ray diffraction (XRD) patterns show that the SiC films have good crystallinity and The results of the high resolution transmission electron microscopy (HRTEM) image and the transmission electron diffraction (TED) pattern indicate a peculiar superlattice structure of the film. The values of the binding energy in the high resolution X-ray photoelectron spectra (XPS) further confirm the formation of SiC.