,Dependence of 1.54 μm Photoluminescence on Excess-Si Degrees of Er-Doped Si-Rich SiO2 Films Deposit

• 作 者: 冉广照 陈源 秦国刚 马振昌 宗婉华 谢立青 郭春刚
• 机 构: Department of Physics, Peking University, Beijing 100871“,”National Key Laboratory for ASIC, Hebei S
• 出 处: 中国物理快报(英文版)
• 发表日期: 2001年7期

Room-temperature 1.54 μm photoluminescence (PL) is observed from Er-doped Si-rich SiO2 (SiO2:Si:Er) films deposited by using the magnetron sputtering technique. To determine the optimum Si content in the SiO2:Si:Er films, the percentage area of the Si target in the composite SiO2-Si-Er target was changed from 0, to 10％, 20％ and 30％. The percentage area of the Er target was fixed at 1％. It is found that the optimum annealing temperatures for Er3+ luminescence intensities are 900° C for the SiO2:Er film and 900, 800 and 700°C for the SiO2:Si:Er films containing 10％, 20％ and 30％ excess-Si (percentage areas of Si target), respectively. The SiO2:Si:Er film containing 20％ excess-Si and annealed at 800° C has the most intense PL.