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详细讨论了基于CMOS工艺宽带片上巴伦的实现.首先分析了应当采用的结构及参数化版图.然后给出了一个宽带集总元件等效电路模型,该模型考虑了各种必须考虑的物理效应.通过采用物理公式与优化拟合相结合的方法提取了模型参数,以保证模型在很宽频带范围内具有较高精度.最后,采用台湾半导体制造有限公司(TSMC)提供的0.13μm混合信号/射频CMOS工艺实际制作了两个具有不同几何参数的巴伦,并使用AgilentE8363B矢量网络分析仪测量了S参数.测量结果表明在高达毫米波频段范围内,模型仿真结果与测试结果符合得很好.
The realization of broadband on-chip balun based on CMOS process is discussed in detail. Firstly, the structure and parameterized layout should be analyzed. Then an equivalent circuit model of broadband lumped element is given, which considers various physical effects that must be considered The model parameters were extracted by the combination of physical formula and optimized fitting to ensure that the model has high accuracy over a wide range of frequency.Finally, using the 0.13μm mixed signal / channel signal provided by Taiwan Semiconductor Manufacturing Co., Ltd. (TSMC) The RF CMOS process actually produced two ballums with different geometries and measured the S-parameters using an Agilent E8363B vector network analyzer.The results show that the simulation results agree well with the test results in the frequency range up to millimeter.