【摘 要】
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Atomic layer etching (ALE) of thin film GaN (0001) is reported in detail using sequential surface modification by BCl3 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive ion etching system.The estimated etc
【机 构】
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School of Physics and Electronic Engineering,Jiangsu Normal University (JSNU),Xuzhou 221116,China
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Atomic layer etching (ALE) of thin film GaN (0001) is reported in detail using sequential surface modification by BCl3 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive ion etching system.The estimated etching rate of GaN is ～ 0.74 nm/cycle.The GaN is removed from the surface of AlGaN after 135 cycles.To study the mechanism of the etching,the detailed characterization and analyses are carded out,including scanning electron microscope (SEM),x-ray photoelectron spectroscopy (XPS),and atomic force microscope (AFM).It is found that in the presence of GaClx after surface modification by BCl3,the GaClx disappears after having exposed to low energy Ar plasma,which effectively exhibits the mechanism of atomic layer etch.This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.
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