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美国TI公司采用双异质结P-HEMT开发了一种高效率的MMIC单级放大器,在16GHz下,增益为4.5dB,功率附加效率为30.8％,CW输出功率达7W。在输出功率为5W、增益为6dB时,功率附加效率高达35％,这是过去未达到过的。所用P-HEMT的栅长为0.25μm,采用EB技术制成,放大器共包括8组单元,每个单元的栅宽为1500μm,总栅宽为12mm。外延结构是用MBE技术生产的,采用Si双平面掺杂技术,为嵌于两层AlGaAs中间的未掺杂InGaAs沟道提供载流子。In浓度在15％～20％之间,以保证有优良
TI, USA, has developed a high-efficiency MMIC single-stage amplifier using a double heterojunction P-HEMT with a gain of 4.5dB at 16GHz, 30.8% additional power, and CW output power of 7W. At an output power of 5W and a gain of 6dB, the power added efficiency is as high as 35%, which was not achieved in the past. The P-HEMT used has a gate length of 0.25 μm and is fabricated using the EB technology. The amplifier consists of eight groups of cells, each with a gate width of 1500 μm and a total gate width of 12 mm. The epitaxial structure is fabricated using MBE technology using Si biplane doping techniques to provide carriers for undoped InGaAs channels embedded in the middle of two AlGaAs layers. In concentration of 15% to 20%, in order to ensure that there are excellent