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带有平面门极和场止结构的新型IGBT器件已应用到最新研发的1200V模块上。与沟槽门极相比,平面门极更适合高速应用。实验结果:在20kHz载波频率下,新的IGBT模块比沟槽门极IGBT模块降低大约20%的功率损耗。
New IGBT devices with planar gate and field stop structures have been applied to the newly developed 1200V module. Compared with trench gate, planar gate is more suitable for high-speed applications. Experimental Results: The new IGBT module reduces power loss by approximately 20% over the trench gate IGBT module at a carrier frequency of 20kHz.