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An improved structure of Schottky rectifier,called a trapezoid mesa trench metal-oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS),is proposed and studied by two-dimensional numerical simulations.Both forward and especially better reverse I-V characteristics,including lower leakage current and higher breakdown voltage,are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier (TMBS) as well as a conventional planar Schottky barrier diode rectifier.Optimized device parameters corresponding to the requirement for high breakdown voltage are given.With optimized parameters,TM-TMBS attains a breakdown voltage of 186 V,which is 6.3% larger than that of the optimized TMBS,and a leakage current of 4.3×10 6 A/cm 2,which is 26% smaller than that of the optimized TMBS.The relationship between optimized breakdown voltage and some device parameters is studied.Explanations and design rules are given according to this relationship.
An improved structure of Schottky rectifier, called a trapezoid mesa trench metal-oxide semiconductor (MOS) barrier Schottky rectifier (TM-TMBS), is proposed and studied by two-dimensional numerical simulations. leakage current and higher breakdown voltage, are demonstrated by comparing our proposed TM-TMBS with a regular trench MOS barrier Schottky rectifier (TMBS) as well as a conventional planar Schottky barrier diode rectifier. Optimized device parameters corresponding to the requirement for high breakdown voltage are given.With optimized parameters, TM-TMBS attains a breakdown voltage of 186 V, which is 6.3% larger than that of the optimized TMBS, and a leakage current of 4.3 × 10 6 A / cm 2, which is 26% smaller than that that of the optimized TMBS. The relationship between anomalous breakdown voltage and some device parameters is studied. Explanations and design rules are given according to this relationship.