The off-state gate isolation technique to improve ASET tolerance in differential analog design

• 作 者: HU ChunMei CHEN ShuMing CHEN JianJun QIN JunRui
• 机 构: College of Computer, National University of Defense Technology,
• 出 处: Science China(Technological Sciences)
• 发表日期: 2013年10期
• 关键词: analog isolation drain cancellation layout mitigate NMOS amplifier transistor ex

A novel off-state gate RHBD technique to mitigate the single-event transient(SET)in the differential data path of analog circuit is demonstrated in this paper.Simulation results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce differential mode voltage perturbation effectively.It is indicated that this technique is more effective to mitigate SET than the differential charge cancellation(DCC)technique with less penalty.

A novel off-state gate RHBD technique to mitigate the single-event transient (SET) in the differential data path of analog circuit is demonstrated in this paper. Simulation results present that this off-state gate technique could exploit charge sharing in differential circuits and reduce differential mode voltage perturbation effectively. It is indicated that this technique is more effective to mitigate SET than the differential charge cancellation (DCC) technique with less penalty.