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1.前言当前,人们注视SiC、Si_3N 4等陶瓷超细粉作为烧结原料。合成陶瓷超细粉较新的方法有CO_2激光法,用CO_2激光合成SiC、Si_3N_4等陶瓷超细粉。目前已有若干报导大部分试制是用SiH_4气体作原料,在减压的条件下进行反应。虽然SiH_4气体具有能良好吸收CO_2激光,可制得不含有H(氢)以外元素的高纯度超细粉等优点,但由于化学不稳定性,在处理上须加特别注意,而且价格昂贵,因此人们期待利用SiH_4以外的气体作为Si源,反应能在日常大气压状况下进行的更为经济的SiC、Si_3N_4陶瓷超细粉制造法。 Bauer等使用比SiH_4容易处理的SiH_2Cl_2、SiCl_4气体作为Si源的原料,在大气压下进行SiC、Si_3N_4超细粉合成研究,制作者还研究了在大气压下由SiH_2Cl_2生成SiC超细粉的条件。
1. Preface At present, people watch SiC, Si_3N 4 ceramic ultrafine powder as a sintering raw material. Newer methods of synthesizing ceramic ultrafine powders include CO_2 laser method, synthesis of superfine powders of ceramics such as SiC and Si_3N_4 by CO_2 laser. At present, there are several reports that most of the trial production is carried out by using SiH_4 gas as a raw material under reduced pressure. Although SiH 4 gas has the advantage of being able to absorb CO 2 laser well, it is possible to produce high-purity ultrafine powder which does not contain elements other than H (hydrogen) and the like, due to its chemical instability, it requires special attention in handling and is expensive It is expected that the use of gas other than SiH 4 as a Si source will enable the production of more economical SiC and Si 3 N 4 ceramic ultrafine powders at normal atmospheric pressure. Bauer et al. Used SiH 2 Cl 2 and SiCl 4 gas, which are easier to handle than SiH 4, as raw materials for Si source, and synthesized SiC and Si 3 N 4 ultrafine powders under atmospheric pressure. The authors also studied the conditions for producing SiC ultrafine powders from SiH 2 Cl 2 at atmospheric pressure.