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Computer simulation was used for optimizing a hot zone for Czochralski (CZ) silicon crystal growth.The heater structure and heat shield material were investigated.With this optimized hot zone,the temperature gradient near the crystal/melt interface increased and the CZ crystal could be grown at a faster rate.It is a great contribution for saving power consumption.
Computer simulation was used for optimizing a hot zone for Czochralski (CZ) silicon crystal growth. The heater structure and heat shield material were investigated. Here this optimized hot zone, the temperature gradient near the crystal / melt interface increased and the CZ crystal could be grown at a faster rate. It is a great contribution for saving power consumption.