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一般来说,需使用有源器件的75-100 GHz W波段的毫米波被认为是Ⅲ-Ⅴ族化合物半导体技术的天地。但随着f_T/f_(max)频率超过150 GHz,更新的SiGe工艺可竞
In general, millimeter waves in the 75-100 GHz W-band that require the use of active devices are considered world class III-V compound semiconductor technologies. But as the f_T / f_ (max) frequency exceeds 150 GHz, the newer SiGe process can be competitive