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采用通过深能级杂质的间接隧道过程与热激发、俘获过程之间的细致平衡,推导出间接隧道过程所引起的电容的理论表达式.这一电容仅出现在零偏压附近,不是电压的单调上升函数,有极大值及负值出现.作了数值计算,所得 C-V曲线的形状与窄禁带 Hg_(1-x)Cd_xTe P-N结的实测的C-V曲线的形状相似.
The theoretical expression of the capacitance induced by the indirect tunneling process is deduced from the detailed balance between the indirect tunneling process through deep level impurities and the thermal excitation and capture process.The capacitor appears only near zero bias and not at voltage The monotonic ascending function has both maximum and negative values. The shape of the obtained CV curve is similar to the measured CV curve of a narrow bandgap Hg_ (1-x) Cd_xTe PN junction.