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采用PR650光谱光度计对高速沉积微晶硅薄膜的生长过程进行了在线监测研究,并对所对应的材料进行了Raman谱和红外吸收谱(FTIR)的测试.结果表明:能反映材料晶化程度的I[SiH*]/I[Hβ*]比值在沉积时间为100s之内有下降的趋势,且反应气体总流量Tfl越小下降趋势越明显,这与拉曼散射光谱对材料的结构测试结果一致;沉积5min时I[Hβ*]/I[Hα*]的强度比值表明氢等离子体中的电子温度随Tfl的增加先减小后增加,相对应的红外吸收谱(FTIR)表明材料的微结构因子R先减小后增加,即氢等离子体的电子温度变化对材料质量有较大的影响.
PR650 spectrophotometer was used to monitor the growth of high-speed deposited microcrystalline silicon thin films and the Raman and infrared absorption spectra (FTIR) of the deposited materials were measured.The results show that the material can reflect the degree of crystallinity , The ratio of I [SiH *] / I [Hβ *] tends to decrease within 100 s of the deposition time, and the smaller the total flow of the reactant gas, the smaller the decrease of the total flow rate Tfl. This is in agreement with the results of Raman scattering spectroscopy The intensity ratio of I [Hβ *] / I [Hα *] at 5min deposition shows that the electron temperature in hydrogen plasma first decreases and then increases with the increase of Tfl. The corresponding infrared absorption spectrum (FTIR) The structural factor R first decreases and then increases, that is, the change of the electron temperature of the hydrogen plasma has a greater influence on the material quality.