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Manganese silicide MnSi2-x thin films have been prepared on n-type silicon substrates through solid phase reaction. The heterostructures were analyzed by X-ray diffraction, Rutherford backscattering spectroscopy, Fourier transform infrared transmittance spectroscopy and the four-point probe technique. The results show that two manganese silicides have been formed sequentially via the reaction of thin layer Mn with Si substrate at different irradiation annealing stages, i.e., MnSi at 450℃ and MnSi1.73 at 550℃. MnSi1.73 phase exhibits preferred growth after irradiation with infrared. In situ four-point probe measurements of sheet resistance during infrared irradiation annealing show that nucleation of MnSi and phase transformation of MnSi to MnS1.73 occur at 410℃ and 530℃, respectively; the MnSi phase shows metallic behavior, while MnSi1.73 exhibits semiconducting behavior. Characteristic phonon bands of MnSi2-x suicides, which can be used for phase identification along with conventional XRD techniques, have been observed by FTIR spectroscopy.
Manganese silicide MnSi2-x thin films have been prepared on n-type silicon substrates through solid phase reaction. The heterostructures were analyzed by X-ray diffraction, Rutherford backscattering spectroscopy, Fourier transform infrared transmittance spectroscopy and the four-point probe technique. show that two manganese silicides have been formed sequentially through the reaction of thin layer Mn with Si substrate at different irradiation annealing stages, ie, MnSi at 450 ° C. and MnSi 1.73 at 550 ° C. MnSi1.73 phase exhibits preferred growth after irradiation with infrared . In situ four-point probe measurements of sheet resistance during infrared irradiation annealing show that nucleation of MnSi and phase transformation of MnSi to MnS 1.73 occur at 410 ° C. and 530 ° C., respectively; the MnSi phase shows metallic behavior, while MnSi 1.73 exhibits semiconducting behavior. Characteristic phonon bands of MnSi2-x suicides, which can be used for phase identification along with con Conventional XRD techniques, have been observed by FTIR spectroscopy.