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本文介绍了NiSi-Si中势垒的获得与特性.提出了NiSi-Si势垒肖特基二极管的基础制造工艺.解决了NiSi-Si势垒实用化中的两个具体问题——粘附层金属和表面保护层的选择.制造出了参数性能优良的NiSi-Si中肖特基势垒二极管.
In this paper, we introduce the acquisition and characteristics of the barrier in NiSi-Si, and propose the basic manufacturing process of the NiSi-Si barrier Schottky diode.We solve two specific problems in practical application of the NiSi-Si barrier-adhesion layer The choice of metal and surface protection layer produces a well-characterized NiSi-Si Schottky barrier diode.