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虽则集成电路级单晶衬底的氧本征吸杂工艺已作过广泛的探讨,重掺衬底的氧本征吸杂研究还仅是近年来才开始的.与体材料相比,采用P/P~+和n/n~+外延材料加工MOS电路有很多优点.自从得克萨斯仪器公司在81年首先成功地在工业上采用硅外延片加工64k RAM以来,MOS电路的衬底已开始从体单晶向外延片的过渡.同时,也激发了研究重掺衬底氧本征吸杂(IG)工艺的兴趣.本实验室通过对重掺砷衬底氧本征吸杂工艺的摸索,体内缺陷的观察,外延层上MOS C-t寿命以及二极管反向特性曲线的测定,以探讨高掺杂情况下,衬底硅材料的本征吸杂能力.
Although the integrated circuit-level single crystal substrate oxygen absorption process has been extensively discussed, heavily doped substrate oxygen absorption study only in recent years only began.Compared with the bulk material, the use of P / P ~ + and n / n ~ + There are many advantages to MOS processing of epitaxial materials. Since Texas Instruments first succeeded in manufacturing silicon 64 k DRAM in industry in 1981, the substrate of the MOS circuit has begun to evolve from the bulk The transition from single crystal to epitaxial wafer, and the interest in studying the IG technology of heavily doped substrate oxygen has also been stimulated.In this study, Defect observation, MOS Ct epitaxial layer lifetime and diode reverse characteristic curve were measured to investigate the intrinsic gettering ability of silicon substrate under high doping conditions.