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微晶硅(GD-μC-Si∶H)薄膜具有掺杂效率高,以及薄膜稳定性好等优点,这对研制微晶硅器件是很有利的,因两引起广泛重视。我们采取射频辉光放电(RF-GD)法制备样品。射频场频率为1.1×10~7Hz,功率从几瓦到几百瓦连续可调,我们通常在30W 左右淀积样品,反应室为石英管,射频场通过弧形极板或平行板以外电容耦合方式引入反应室,衬底温度可自动控制。反应气体为高纯硅烷用高纯氢气稀释至2.5%,在射频场作用下离解,并淀积微晶硅薄膜。作透射电子显微镜(TEM)和
The microcrystalline silicon (GD-μC-Si: H) thin film has the advantages of high doping efficiency and good film stability, which is very beneficial for the development of microcrystalline silicon devices due to the wide attention of the two. We took samples by radio frequency glow discharge (RF-GD) method. RF field frequency of 1.1 × 10 ~ 7Hz, power continuously adjustable from a few watts to several hundred watts, we usually deposited samples at about 30W, the reaction chamber is a quartz tube, the RF field through the arc plate or parallel plate outside the capacitive coupling Way into the reaction chamber, the substrate temperature can be automatically controlled. The reaction gas is diluted to 2.5% with high-purity hydrogen to high-purity silane, dissociated under the action of radio frequency field, and deposited microcrystalline silicon film. Transmission electron microscopy (TEM) and